advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 1 dc - 12 ghz discrete power phemt TGF2021-02 key features and performance ? frequency range: dc - 12 ghz ? > 33 dbm nominal psat ? 59% maximum pae ? 11 db nominal power gain ? suitable for high reliability applications ?2mm x 0.35 m power phemt ? nominal bias vd = 8-12v, idq = 150-250ma (u nder rf drive, id rises from 150ma to 480ma) ? chip dimensions: 0.57 x 0. 79 x 0.10 mm (0.022 x 0.031 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint TGF2021-02 is a discrete 2 mm phemt which operates from dc- 12 ghz. the TGF2021-02 is designed using triquints proven standard 0.35um power phemt production process. the TGF2021-02 typically provides > 33 dbm of saturated output power with power gain of 11 db. the maximum power added efficiency is 59% which makes the TGF2021-02 appropriate for high efficiency applications. the TGF2021-02 is also ideally suited for point-to-point radio, high-reliability space, and military applications. the TGF2021-02 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 940 ma 2/ | i g | gate supply current 14 ma p in input continuous wave power 28 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c C tbase c) / 43.3 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2021-02 table ii dc probe characteristics (t a = 25 q c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 600 - ma gm transconductance - 750 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -14 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquints 0.35um power phemt devices, rf breakdown >> dc breakdown
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 3 table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter vd = 10v idq = 150ma vd = 12v idq = 150ma units power tuned: psat pae gain rp 2/ cp 2/ g l 3/,4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 33.8 50 11 13.30 0.927 0.719 e 164.9 34.5 48 11 15.97 0.953 0.720 e 161.4 dbm % db w pf - efficiency tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 33 59 11.5 24.50 1.077 0.778 e 155.2 33.7 55 11 27.79 1.011 0.774 e 152.7 dbm % db w pf - TGF2021-02 table iv thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 150 ma pdiss = 1.8 w 148 43.3 1.2 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. 1/ values in this table are scaled from measurements taken from a 1mm unit phemt cell at 10 ghz 2/ large signal equivalent phemt output network 3/ optimum load impedance for maximum power or maximum pae at 10 ghz 4 the reflection coefficients for this device have been calculated from the scaled large signal rp & cp. the series resistance and inductance (rd and ld) shown in the figure on page 4 is excluded
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 4 linear model for 1mm unit phemt cell TGF2021-02 upc = 1 mm unit phemt cell drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs source source rp, cp gate source source drain upc 8qlws+(07fhoo 5hihuhqfh3odqh model parameter vd = 8v idq = 75ma vd = 8v idq = 100ma vd = 8v idq = 125ma vd = 10v idq = 75ma vd = 10v idq = 100ma vd = 12v idq = 75ma units rg 0.45 0.45 0.45 0.45 0.450 0.45 w rs 0.14 0.14 0.14 0.17 0.160 0.19 w rd 0.41 0.43 0.46 0.41 0.450 0.410 w gm 0.310 0.318 0.314 0.296 0.303 0.286 s cgs 2.39 2.58 2.70 2.61 2.74 2.72 pf ri 1.22 1.19 1.20 1.24 1.23 1.27 w cds 0.20 0.201 0.201 0.198 0.199 0.196 pf rds 149.1 152.3 158.8 171.8 173.7 187.9 w cgd 0.115 0.107 0.101 0.101 0.098 0.096 pf tau 6.29 6.63 6.99 7.19 7.410 7.79 ps ls 0.009 0.009 0.009 0.009 0.010 0.010 nh lg 0.089 0.089 0.089 0.089 0.089 0.089 nh ld 0.120 0.120 0.120 0.120 0.120 0.120 nh rgs 33000 33000 35100 28900 35700 24400 w rgd 349000 425000 405000 305000 366000 238000 w
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 5 TGF2021-02 linear model for 2mm phemt l - via = 0.0135 nh (3x) upc upc 14 3 gate pads (2x) drain pads (2x) 2
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 6 TGF2021-02 unmatched s-parameter for 2mm phemt bias conditions: vd=12v, idq=150ma note: the s-parameters are calculated by connecting nodes 1-2 together, and nodes 3-4 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.444 -108.860 26.175 121.91 -32.618 34.41 -11.025 -98.11 1 -0.572 -140.91 21.362 103.42 -31.423 18.42 -11.493 -127.41 1.5 -0.605 -153.69 18.095 94.44 -31.187 11.96 -11.428 -137.24 2 -0.616 -160.46 15.676 88.41 -31.135 8.45 -11.181 -140.97 2.5 -0.620 -164.67 13.761 83.63 -31.146 6.22 -10.844 -142.33 3 -0.621 -167.58 12.175 79.50 -31.191 4.65 -10.455 -142.71 3.5 -0.619 -169.72 10.819 75.76 -31.257 3.50 -10.037 -142.70 4 -0.617 -171.39 9.632 72.27 -31.340 2.63 -9.606 -142.57 4.5 -0.613 -172.74 8.574 68.95 -31.437 1.98 -9.173 -142.48 5 -0.610 -173.86 7.619 65.77 -31.546 1.49 -8.745 -142.47 5.5 -0.605 -174.82 6.745 62.70 -31.666 1.16 -8.329 -142.57 6 -0.600 -175.66 5.939 59.71 -31.795 0.96 -7.926 -142.80 6.5 -0.595 -176.41 5.190 56.80 -31.933 0.89 -7.540 -143.14 7 -0.589 -177.09 4.488 53.96 -32.077 0.95 -7.172 -143.58 7.5 -0.584 -177.71 3.828 51.18 -32.228 1.13 -6.821 -144.12 8 -0.578 -178.28 3.203 48.45 -32.384 1.44 -6.489 -144.73 8.5 -0.572 -178.81 2.610 45.78 -32.543 1.87 -6.174 -145.42 9 -0.566 -179.32 2.044 43.16 -32.704 2.42 -5.876 -146.17 9.5 -0.559 -179.80 1.503 40.59 -32.865 3.11 -5.595 -146.97 10 -0.553 179.75 0.984 38.06 -33.025 3.92 -5.330 -147.81 10.5 -0.547 179.31 0.485 35.58 -33.182 4.85 -5.079 -148.69 11 -0.541 178.88 0.005 33.15 -33.333 5.92 -4.842 -149.59 11.5 -0.535 178.47 -0.459 30.75 -33.478 7.10 -4.619 -150.52 12 -0.528 178.08 -0.908 28.40 -33.614 8.41 -4.409 -151.46 12.5 -0.522 177.69 -1.343 26.09 -33.738 9.83 -4.210 -152.42 13 -0.516 177.31 -1.765 23.82 -33.849 11.36 -4.022 -153.39 13.5 -0.510 176.94 -2.175 21.59 -33.946 12.98 -3.844 -154.36 14 -0.505 176.57 -2.574 19.39 -34.026 14.69 -3.677 -155.34 14.5 -0.499 176.21 -2.963 17.23 -34.088 16.48 -3.518 -156.32 15 -0.493 175.86 -3.341 15.10 -34.130 18.32 -3.368 -157.29 15.5 -0.488 175.51 -3.710 13.01 -34.153 20.21 -3.226 -158.27 16 -0.483 175.16 -4.071 10.95 -34.154 22.13 -3.091 -159.24 16.5 -0.477 174.82 -4.424 8.93 -34.135 24.06 -2.964 -160.21 17 -0.472 174.49 -4.769 6.93 -34.095 25.99 -2.843 -161.17 17.5 -0.467 174.15 -5.107 4.97 -34.035 27.90 -2.728 -162.13 18 -0.463 173.82 -5.439 3.03 -33.956 29.77 -2.619 -163.07 18.5 -0.458 173.49 -5.764 1.13 -33.859 31.60 -2.515 -164.02 19 -0.453 173.17 -6.083 -0.75 -33.745 33.37 -2.416 -164.95 19.5 -0.449 172.85 -6.396 -2.61 -33.615 35.08 -2.323 -165.87 20 -0.445 172.53 -6.704 -4.44 -33.473 36.72 -2.233 -166.79 20.5 -0.441 172.21 -7.007 -6.24 -33.318 38.28 -2.148 -167.69 21 -0.437 171.89 -7.306 -8.03 -33.153 39.75 -2.067 -168.59 21.5 -0.433 171.58 -7.600 -9.79 -32.979 41.15 -1.989 -169.48 22 -0.429 171.26 -7.890 -11.53 -32.798 42.46 -1.915 -170.36 22.5 -0.425 170.95 -8.176 -13.25 -32.611 43.68 -1.845 -171.23 23 -0.422 170.64 -8.459 -14.95 -32.419 44.83 -1.777 -172.10 23.5 -0.418 170.34 -8.738 -16.63 -32.224 45.89 -1.713 -172.95 24 -0.415 170.03 -9.015 -18.29 -32.026 46.87 -1.651 -173.79 24.5 -0.412 169.72 -9.288 -19.94 -31.826 47.79 -1.591 -174.63 25 -0.409 169.42 -9.559 -21.57 -31.626 48.63 -1.534 -175.46 25.5 -0.406 169.12 -9.828 -23.19 -31.426 49.40 -1.480 -176.28 26 -0.403 168.82 -10.094 -24.79 -31.226 50.10 -1.427 -177.09
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 7 1( 5& % >@ >@ >@ >@ >@ >@ >@ >@ 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdgv *dwh [ [ %rqgsdgv 'udlq [ [ gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2021-02 drain gate
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 8 reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 se c an alloy station or conveyor furnace with reducing atmosphere should be used. do not use flux coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes TGF2021-02
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